gbu15l05~GBU15L06 creat by art - low forward drop enhance the efficiency - oxide planar chip junction - high surge current capability - halogen-free according to iec 61249-2-21 case: gbu molding compound, ul flammability classification rating 94v-0 part no. with suffix "h" means aec-q101 qualified packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 polarity: as marked weight: 4 g (approximately) symbol unit v rrm v v rms v v dc v i f(av) a i 2 ta 2 s t j c t stg c document number: ds_d0000071 version: b15 800 560 gbu maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter mechanical data gbu15l05 GBU15L06 taiwan semiconductor low vf, low noise sin g le-phase sin g le in-line brid g e rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec 15a, 600v - 800v maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 15 i fsm 630 600 420 600 a i fsm 200 a rating of fusing ( t<8.3ms) 166 v operating junction temperature range - 55 to +150 i r 5 a 150 maximum reverse current @ rated v r t j =25c t j =125c peak forward surge current, 8.3 ms single half sine-wave peak forward surge current, 1.0 ms single half sine-wave maximum instantaneous forward voltage i f = 7.5 a (note 1) t j =25c t j =125c v f 0.75 0.87 0.93 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle typical thermal resistance r jc r ja 3 15 c/w 0.96 -- 800 max typ typ max - 0.90
part no. *: optional available part no. ratings and characteristics curves (t a =25c unless otherwise noted) document number: ds_d0000071 version: b15 x0 d2 c2 packing code packing code suffix (*) aec-q101 qualified green compound package packing forming part no. suffix h 20 / tube 20 / tube gbu g packing code suffix packing code part no. suffix gbu15l05 h d2 g gbu15l0x (note 1) gbu15l05~GBU15L06 taiwan semiconductor ordering information gbu15l05hd2g note 1: "x" defines voltage from 600v (gbu15l05) to 800v (GBU15L06) example preferred p/n description 0 5 10 15 20 0 25 50 75 100 125 150 average forward current (a) case temperature ( o c) fig.1 forward current derating curve resister or inductive load with heatsink 0 50 100 150 200 250 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine wave 0.01 0.1 1 10 100 0 20406080100 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics t j =25 c t j =125 c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics pulse width=300 s 1% duty cycle t j =25 c t j =125 c 600v 800v
min max min max a 21.80 22.30 0.858 0.878 b 3.50 4.10 0.138 0.161 c 7.40 7.90 0.291 0.311 d 1.65 2.16 0.065 0.085 e 2.16 2.54 0.085 0.100 f 1.65 2.03 0.065 0.080 g 1.52 2.03 0.060 0.080 h 1.02 1.27 0.040 0.050 i 4.83 5.33 0.190 0.210 j 3.30 3.56 0.130 0.140 k 18.30 18.80 0.720 0.740 l 17.50 18.00 0.689 0.709 m 1.90 2.16 0.075 0.085 n 0.46 0.56 0.018 0.022 p/n = specific device code g = green compound yw = date code f = factory code document number: ds_d0000071 version: b15 marking diagram gbu gbu15l05~GBU15L06 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 0 50 100 150 200 250 300 350 400 450 500 0.1 1 10 100 capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vslg=50mvp-p
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